Rajiv Gandhi Proudyogiki Vishwavidyalaya is one of the recent Universities in Madhya Pradesh. There are many Engineering Colleges, Pharmacy Colleges, MCA Colleges, and Architecture Colleges under this University. The University offers Ph.D courses for candidates through entrance test.

Structure of Rajiv Gandhi Proudyogiki Vishwavidyalaya Phd Applied Physics Entrance Exam

The admission for Ph.D course will be a written test followed by interview. The written test will be in Applied Physics. The duration of the test will be for two hours.

Syllabus of Rajiv Gandhi Proudyogiki Vishwavidyalaya Phd Applied Physics Entrance Exam

Mathematical Physics

• Legendre, Bessel, Hermite, Laguerre and  equations
• Physical applications
• Generating function
• Recurrence relation and orthogonal properties
• Laplace and Fourier transforms and their applications
• Solution of simultaneous linear equations
• Gaussian elimination
• Pivoting, iterative method, matrix inversion
• Numerical solution of ordinary differential equations
• Euler’s and Runge Kutta methods
• Predictor and corrector method
• Elementary ideas of solutions of partial differential equations
• BCC theory of Super-conductivity

Electromagnetic Theory

• Laplace and Poisson equations
• Conductors and dielectrics
• Boundary value problems
• Ampere’s and Biot-Savart’s laws
• Faraday’s law
• Maxwell’s equations
• Scalar and vector potentials
• Coulomb and Lorentz gauges
• Boundary conditions at interfaces
• Electromagnetic waves
• Interference, diffraction and polarization
• Radiation from moving charges
• Theory of Plasma state and application

Quantum Mechanics

• Application of  Schodinger wave equation for particle in a box
• Linear harmonic oscillator and tunneling
• Time independent perturbation method for non–degenerate and degenerate
• level and their applications
• Normal  Zeeman effect
• First order Stark effect in Hydrogen atom
• WKB   method

Solid state and semiconductor physics

• Bloch theorem
• Kronig-Penny model
• Origin  of energy gap
• Brillion zones
• Number of possible wave functions per band
• Velocity of electrons according to periodic potential
• Influence of electric field, effective mass, concept of hole.
• Intrinsic and Extrinsic carrier concentration
• Position of Fermi energy level
• Carrier Drift
• Variation of mobility with field strength-hot electron effect
• Diffusion
• Carrier generation and recombination
• Excess – carrier Lifetime
• Continuity equation
• Carrier density profile-diffusion length
• Principle and working, characteristics and  basic uses of following devices: FET,
• MOSFET, UJT, SCR, tunnel diode, Zener  Diode, Solar cell, photo detector, LED and
• Quantum well structures
• Magnetism and magnetic materials

Nuclear and Particle Physics

• Rutheford scattering
• Basic properties of nuclei
• Radioactive decay
• Nuclear forces
• Two nucleon problem
• Nuclear reactions
• Conservation laws
• Fission and fusion
• Nuclear models
• Particle accelerators
• Detectors
• Elementary particles: photons, baryons, mesons and leptons
• Quark model

Lasers and Fiber Optics

• Laser rate equations: three  and four-level systems
• Variation of laser power around threshold
• Longitudinal and Transverse modes of laser cavity
• Mode selection, Mode lasers
• Single mode, multi mode, step index and graded index  optical fibers
• Wave propagation through them
• Pulse dispersion in  optical fibers
• Various losses in optical fibers
• Fiber manufacturing processes: MCVD, PCVD, OVD and VAD and splicing of
• fibers, locking and Q switching
• Ruby laser, Nd-YAG laser, Carbon dioxide laser, He-Ne laser
• Semiconductor Digital communication

Electrodynamics

• Maxwell’s equations
• Boundary conditions for electric and magnetic fields
• Propagation of electromagnetic waves in  air and ionized medium
• Motion of charged particle in electromagnetic field: Uniform E and B fields
• Non uniform Fields
• Diffusion across magnetic fields
• Time varying E and B fields

Statistics & Research Aptitude

• Mean, median, mode
• Basic concepts of probability
• Coefficient of variance
• Standard error
• Standard deviation
• Correlation and  regression analysis
• Student t-test, F-test, analysis of variance (ANOVA)
• Data graphics and  data interpretation
• Principles and various models of statistical optimization techniques
• Optimization softwares
• National and international scenario of scientific  research
• Literature reviewing
• Scientific and research journals
• Impact valuation
• Research article
• Patent drafting, various scientific websites

Eligibility Criteria

Candidates applying for Doctor of Philosophy must hold Master’s degree in Applied Physics from a recognized university. The candidate should obtain at least 60% marks in the qualifying exam.

How to apply?

Candidates can download the application form from the official website of the University http://rgpv.ac.in/. The completed application form should be sent to Registrar,

Rajiv Gandhi Proudyogiki Vishwavidyalaya, Airport Bypass, Gandhi Nagar, Bhopal  –462033. The filled application form should be enclosed with a demand draft or IPO or Rs. 750/- in favour of Registrar RGPV payable at Bhopal. The candidate should keep a header on the envelope “Application form for Ph.D. Admission in the faculty of Applied Physics”.

How to fill the Form?

The candidates should enter all the details carefully. The applicant should affix the recent photograph in the specified area. The candidate should self attest the photograph. The applicant should enter their name and father’s name in bold letters. The candidate should put a tick in the relevant box. The applicant should fill in the complete address along with the pin code. While entering the phone number, the candidate should enter the STD code as well. The applicant should enter the bank details carefully after referring to the bank draft.

Important Dates (Tentative)

[Please note that we only provide tentative dates based on previous years dates. For exact dates related information it is always best to check official websites only.]

Last date of submission of Application Form : Last week of October, 2012

Date of Written Test : Second Week of November, 2012

Date of Declaration of Result: Last week of November, 2012

Rajiv Gandhi Proudyogiki Vishwavidyalaya Phd Applied Physics Entrance Exam Centers

UIT , Rajiv Gandhi Proudyogiki Vishwavidyalaya Bhopal

Contact Address for Rajiv Gandhi Proudyogiki Vishwavidyalaya Phd Applied Physics Entrance Exam

• Address: University Institute of Technology RGPV Bhopal, Airport Bypass Road, Gandhi Nagar, Bhopal - 462 036, Madhya Pradesh
• Phone: +91-755-2742003-5
• Fax: +91-755-2524074
• Email: [email protected]
• Website: http://www.rgtu.net

Colleges Accepting for Rajiv Gandhi Proudyogiki Vishwavidyalaya Phd Applied Physics Entrance Exam Score

Rajiv Gandhi Proudyogiki Vishwavidyalaya

Reference Books for Rajiv Gandhi Proudyogiki Vishwavidyalaya Phd Applied Physics Entrance Exam

• Mathematical Physics by Donald H Menzel
• Mathematical Physics by Sadri Hassani
• Electromagnetic Theory by Stratton Julius Adams
• Electromagnetism: Theory and Applications by Pramanik Ashutosh
• Quantum Mechanics by Agarwal B K , D Phil , Prakash Hari Ph D
• Quantum Mechanics by Eugen Merzbacher
• Nuclear and Particle Physics by S L Kakani
• Fiber Optics & Lasers The Two Revolution by Ghatak
• Electrodynamics by Fulvio Melia
• Electrodynamics by Megan Ferguson

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Study Plan

The Ph.D entrance exam is highly competitive exam and requires good preparation. The candidate should revise the difficult portions first and then cover the easy topics. The candidate should divide the whole syllabus in to small subparts and complete each part separately. The candidate should discuss with seniors who have already cleared the entrance test and make a proper plan. The candidate should revise all the portions at least once before the exam.

How and Where To Get the Results?

The candidate can obtain the result from the website of the University http://rgpv.ac.in/.

Score Validity

The score of Rajiv Gandhi Proudyogiki Vishwavidyalaya Ph.D Applied Physics Entrance Exam will be valid for one year.